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    • No.

      Patent No

      Patent Name

      License Announcement Day

    • 1

      200410009840.0

      Large area and low power laser stripping method of epitaxial layer of GaN base

      2009-02-18

    • 2

      200610144316.3

      A method of making free-standing GaN substrate

      2009-06-24

    • 3

      200610167605.5

      The method of making high quality GaN think film on heterogeneous substrates.

      2009-06-24

    • 4

      200810225953.2

      The method of Laser Lift-Off to separate GaN and sapphire substrate without dama..

      2012-01-25

    • 5

      201010617286.X

      A method and devices of hydride vapor phase epitaxy (HVPE) for multiple large su..

      2012-06-13

    • 6

      201010617788.2

      Improved method of Laser Lift-Off which can eliminate residual stress of GaN epi..

      2012-06-13

    • 7

      201120349715.X

      A flange component using multi-pipeline liquid to cool down and control temperat..

      2012-06-13

    • 8

      201120349762.4

      A new filter unit that can be used for online cleaning without disassembly

      2012-06-13

    • 9

      201120355244.3

      A structure connecting quartz tube and metal

      2012-06-13

    • 10

      201010618011.8

      A device and method of annealing

      2012-07-11

    • 11

      201010617807.1

      The method that an independent MO source system can provide MO source to the sem..

      2012-07-18

    • 12

      201220004381.7

      An automatic feeding equipment

      2012-10-10

    • 13

      201110142242.0

      Slit type multi-gas transport nozzle structure

      2012-11-21

    • 14

      201110276973.4

      A mount for the semiconductor epitaxial system

      2013-01-09

    • 15

      201220221883.5

      A control system for vapor phase epitaxy equipment

      2013-02-06

    • 16

      201220320302.3

      A wafer tray

      2013-03-13

    • 17

      201220320305.7

      A device to hit up the gas to high temperature rapidly

      2013-03-13

    • 18

      201110102031.4

      A patterned substrate

      2013-04-10

    • 19

      201220573278.4

      Multi-cavity step processing device for vapor phase epitaxy

      2013-06-19

    • 20

      201010617738.4

      A treatment method for ammonium chloride exhaust and its equipment

      2013-07-24

    • 21

      201010617750.5

      The method of producing patterned substrates of GaN

      2013-08-28

    • 22

      201110453183.9

      A single-contact rotating boat

      2013-10-30

    • 23

      200910136458.9

      An integrated equipment for Laser Lift-Off and cutting

      2014-03-12

    • 24

      201330477184.7

      A kind of frog light

      2014-06-11

    • 25

      201320727092.4

      A safe and efficient wafer jig

      2014-07-10

    • 26

      201210151216.9

      The method of using MOVPE technology to grow high brightness LED with asymmetric..

      2014-08-27

    • 27

      201420457076.2

      A heating device that is easy to be changed and can use mixed ways of heating

      2015-01-21

    • 28

      201420262140.1

      A supporting base for grinding and polishing wafers

      2015-01-28

    • 29

      201210306671.1

      A method for preparing free-standing substrate from GaN single crystal materials..

      2015-02-18

    • 30

      201420562470.2

      A separate supporting base for the epitaxial growth

      2015-02-18

    • 31

      201210319877.8

      A device and method for unloading wafers during high temperature growth

      2015-04-22

    • 32

      201210533750.6

      A method for producing invisible structured substrate

      2015-04-22

    • 33

      201210274906.3

      A laser frog light with safety function keeping the distance between cars

      2015-05-20

    • 34

      201210309119.8

      A boat suitable for GaN epitaxial material industrialization

      2015-05-20

    • 35

      201210559376.7

      A liquid level control device used in high temperature environment

      2015-07-22

    • 36

      201520162543.3

      A GaN-based composite substrate with patterned synchronization during the transf..

      2015-07-29

    • 37

      201520162977.3

      A GaN-based composite substrate with arrayed transfer

      2015-08-19

    • 38

      201520264359.X

      A GaN-based composite substrate containing a diffusion barrier layer

      2015-08-19

    • 39

      201310012395.2

      A square nozzle structure for vapor phase epitaxy of a material

      2015-09-16

    • 40

      201520213249.0

      A new type of MOCVD spray head cleaning brush head

      2015-09-16

    • 41

      201210559395.X

      A simple wafer jig

      2015-10-07

    • 42

      201210303314.X

      Method 2 used to improve the surface temperature field of substrate wafer during..

      2015-11-04

    • 43

      201310318526.X

      A liquid-assisted laser Life-Off method

      2015-11-25

    • 44

      201210068033.0

      A method for preparing and making composite substrate for GaN growth

      2016-01-20

    • 45

      201210559456.2

      A jig with three chuck heads specially used for wafer

      2016-01-27

    • 46

      201210559378.6

      High temperature resistant skid clamping jig used in semiconductor and microelec..

      2016-02-10

    • 47

      201310394554.X

      A hydride gas deposition device and method for improving the thickness distribut..

      2016-02-10

    • 48

      201520798181.7

      A jig for quartz casing installation

      2016-03-02

    • 49

      201410028993.3

      A reactor design and method for vapor phase epitaxy of nitride semiconductor mat..

      2016-04-27

    • 50

      201520962682.4

      An auxiliary jig for large diameter quartz outer sleeve installation

      2018-04-27

    • 51

      201521002074.5

      An installation device for holding a quartz cavity

      2016-04-27

    • 52

      201310012409.0

      A fan shaped nozzle structure for vapor phase epitaxy

      2016-05-11

    • 53

      201310542018.X

      A front drive logistics field control rod

      2016-05-11

    • 54

      201410031343.4

      A reactor for hydride vapor phase epitaxy

      2016-05-18

    • 55

      201210559394.5

      A multi-chuck wafer jig

      2016-06-01

    • 56

      201310601124.0

      A controlled precursor channel

      2016-06-01

    • 57

      201210255792.8

      A composite substrate with a protective layer against metal diffusion

      2016-06-27

    • 58

      201210119613.8

      A method for preparing and making patterned sapphire substrate for GaN growth

      2016-06-29

    • 59

      200910136457.4

      Solid-state laser stripping equipment and stripping methods

      2018-06-29

    • 60

      201410398217.2

      A device for stabilizing conversion rate

      2016-08-24

    • 61

      201410196612.2

      A dual channel nozzle structure with uniformly distributed controllable reactant..

      2016-09-28

    • 62

      201620797442.8

      A device for improving the efficiency of converting hydrogen chloride into GaN

      2017-01-18

    • 63

      201410004051.1

      A new type of patterned substrate and its preparation method

      2017-02-08

    • 64

      201720349115

      A hydride vapor phase epitaxial graphite boat structure

      2017-12-29

    • 65

      201510656861.X

      A linkage adjustable heat insulation device and its application method

      2018-01-09

    • 66

      201610017711.9

      A single crystal growth apparatus and method for nitrogen compounds

      2018-01-23

    Copyright ? 2018 Dongguan Sino NitrideSemiconductor Co., Ltd. All Rights Reserved. ICP Number:粵ICP備12004059號

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